Electrophysics of porous silicon structures, and on its basis

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ZIMIN Sergei Pavlovich
Electrophysics of porous silicon structures, and on its basis
Yaroslavl - 2003

Table of contents
p. 5
1. Formation of porous silicon layers and study their structural
Performance 18
1.1. Methods of formation of porous silicon layers 18
1.2. The pore structure and surface properties of the film 22 is amorphized
1.3. Acoustic method for determining the porosity of mesoporous samples 35
1.4. Effect of porous structure of duplex formation during etching of silicon wafers of high 54
Chapter Summary 63
2. The phenomena of charge transport in porous silicon layers with
64 different morphologies
2.1. Hall effect and conductivity in the mesoporous silica-based
Si \u003cSb\u003e low porosity 64
2.2. Hall effect and conductivity in macroporous silicon obtained
on the lightly doped n-Si substrate 70
2.2.1. An analysis of the experimental results in terms of the model of impurity atoms of hydrogen passivation 75
2.2.2. The analysis of experimental results, taking into account the bending zones
On the walls of the pores 80
2.3. The transfer of charge carriers in the mesoporous silicon-based p + -Si 82
2.4. The conductivity of the porous silicon with a high porosity, amorphous silicon-containing phase 92
2.4.1. CVC test structures with thick layers of porous silicon 92
2.4.2. The temperature dependence of the resistivity of porous silicon with a high porosity of 95
2.4.3. Analysis of non-linear nature of the porous resistance
Silicon in the framework of current limited space 99
2.4.4. Transient Performance for highly layers and the temperature dependence of the carrier mobility
Chapter Summary 2112
3. Classification of the electrical properties of porous silicon and contact phenomena at the interface of porous silicon with metals and crystalline silicon 114
3.1. Classification of electric properties of porous silicon 116
3.2. The electrical contact properties of porous silicon metal 121
3.2.1. Ohmic contact to the nature of the porous silicon first
Group 123
3.2.2. Straighten to contact aluminum / porous silicon 2nd
Group 127
3.3. Boundary Properties of porous silicon / silicon 129 Chapter Summary 3134
4. Effect of thermal annealing and electron irradiation on the electrical conductivity of porous silicon with different pore morphology 135
4.1. Isochronous annealing the porous silicon in an inert atmosphere 135
4.1.1. Annealing of samples PS1 137
4.1.2. Annealing the samples PS2 140
4.1.3. The transition to the low-resistance state and the effect of the relaxation of conduction layers of thermal annealing at 147 PS3
4.1.4. Influence of annealing on the conductivity of 155 beds of PS4
4.2. Effect of irradiation with high-energy electrons in the conduction layers of the PC 158
Chapter Summary 4166
5. The capacitive properties and the dynamic conductivity of porous silicon-containing amorphous phase 167
5.1 The dependence of the dielectric constant of the porous silicon porosities 167
5.2. Analysis of the dependence of the dielectric constant of the porous
Silicon porosity within the three-phase model 170
5.3. The frequency dependence of the capacitance test structures with thick layers of porous silicon in vacuum conditions 178
5.4. Dynamic conductivity structures with thick layers of porous silicon in the frequency range 10-106 Hz in vacuum
Chapter Summary 5193
6. Analysis of electrical and photovoltaic properties of porous silicon group 3 and quasi-highly compensated semiconductors
AIVBVI fluctuating within a model of the potential relief 194
6.1. Quasihomogeneous compensated solid solutions based on semiconductor AIVBVI 195
6.1.1. Electric and photoelectric properties of highly compensated solid solutions on the example of Pb1-xCdxS \u003cNa\u003e 203
6.1.2. Electric and photoelectric properties of other strong

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